Prof. Krishnamoorthy's group works at the intersection of materials, electrical engineering and physics to study and engineer next-generation (ultra)wide band gap semiconductors such as Gallium Oxide. We are interested in epitaxial growth, electronic transport, design/modeling, micro/nano fabrication, and characterization of electronic/optoelectronic devices for a wide range of applications such as power electronics, high frequency electronics and ultra-violet optoelectronics.