Arthur C. Gossard

 Arthur C. Gossard

Professor Emeritus and Research Professor, Materials and Electrical & Computer Engineering


(805) 893-2686
2506 Engineering II
University of California, Santa Barbara
Santa Barbara, CA 93106-5050


Materials Research Areas: 


National Medal of Technology and Innovation
Member, National Academy of Engineering

Member, National Academy of Sciences
Fellow, Electron Devices Society
AAAA Newcomb Cleveland Prize

Research Description: 

Professor Gossard's significant research contributions include the growth of artificially structured materials by molecular beam epitaxy, growth of quantum wells, superlattices and nanostructures, and their applications to high performance electrical and optical devices of low-dimensional structures. He contributes to research on metal/semiconductor nanocomposites that will allow the modification of intrinsic material properties that are important for high efficiency thermoelectrics. Gossard was the first to grow alternate monolayer artificial superlattices in semiconductors and the first modulation doped quantum wells. He was also co-discoverer of the quantum confined Stark effect and the fractional quantization of the Hall Effect. Gossard was formerly a Distinguished Member of the Technical Staff of AT&T Bell Laboratories.


B.A., Harvard University
Ph.D., University of California, Berkeley